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PD - 91477D
IRF3415
HEXFET(R) Power MOSFET
l l l l l
Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 150V
G S
RDS(on) = 0.042 ID = 43A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
43 30 150 200 1.3 20 590 22 20 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.50 ---
Max.
0.75 --- 62
Units
C/W
5/13/98
IRF3415
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. 150 --- --- 2.0 19 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.17 --- --- --- --- --- --- --- --- --- --- 12 55 71 69 4.5 7.5 2400 640 340
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.042 VGS = 10V, ID = 22A 4.0 V VDS = VGS, ID = 250A --- S VDS = 50V, ID = 22A 25 VDS = 150V, VGS = 0V A 250 VDS = 120V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 200 ID = 22A 17 nC VDS = 120V 98 VGS = 10V, See Fig. 6 and 13 --- VDD = 75V --- ID = 22A ns --- RG = 2.5 --- RD = 3.3, See Fig. 10 D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 260 2.2 43 A 150 1.3 390 3.3 V ns C
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 22A, VGS = 0V TJ = 25C, IF = 22A di/dt = 100A/s
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD 22A, di/dt 820A/s, VDD V(BR)DSS,
TJ 175C
VDD = 25V, starting TJ = 25C, L = 2.4mH
RG = 25, IAS = 22A. (See Figure 12)
Pulse width 300s; duty cycle 2%.
IRF3415
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.5V 5.0V BOTTOM 4.5V TOP
1000
100
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.5V 5.0V BOTTOM 4.5V TOP
100
4.5V
20us PULSE WIDTH TJ = 25 o C
1 10 100
4.5V
20us PULSE WIDTH TJ = 175 o C
1 10 100
10
10
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.0
ID = 37A
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
2.5
2.0
TJ = 25 C TJ = 175 C
100
1.5
1.0
0.5
10 4 5 6 7
V DS = 50V 20s PULSE WIDTH 8 9 10
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( oC)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRF3415
6000
5000
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = 22A VDS = 120V VDS = 75V VDS = 30V
16
C, Capacitance (pF)
4000
Ciss
3000
12
8
2000
Coss Crss
1000
4
0 1 10 100
0 0 40 80
FOR TEST CIRCUIT SEE FIGURE 13
120 160 200
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED BY RDS(on)
ISD , Reverse Drain Current (A)
I D , Drain Current (A)
100
100
10us
TJ = 175 o C
10
100us
TJ = 25 o C
1
10
1ms
0.1 0.2
V GS = 0 V
0.6 1.0 1.4 1.8
1 1
TC = 25 o C TJ = 175 o C Single Pulse
10 100
10ms
1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRF3415
50
VDS VGS
RD
40
D.U.T.
+
RG
I D , Drain Current (A)
-VDD
30
10V
Pulse Width 1 s Duty Factor 0.1 %
20
Fig 10a. Switching Time Test Circuit
10
VDS 90%
0 25 50 75 100 125 150 175
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50
0.20 0.1
0.10 0.05 0.02 0.01 P DM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t2
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRF3415
1400
EAS , Single Pulse Avalanche Energy (mJ)
TOP BOTTOM
1 5V
1200
ID 9.0A 16A 22A
1000
VDS
L
D R IV E R
800
RG
20V tp
D .U .T
IA S
+ V - DD
600
A
0 .0 1
400
Fig 12a. Unclamped Inductive Test Circuit
200
0 25 50 75 100 125 150 175
V (B R )D SS tp
Starting TJ , Junction Temperature (oC)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
10 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRF3415
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
IRF3415
Package Outline
TO-220AB Outline Dimensions are shown in millimeters (inches)
2.87 (.11 3) 2.62 (.10 3) 10 .54 (.4 15) 10 .29 (.4 05) 3 .7 8 (.149 ) 3 .5 4 (.139 ) -A 6.47 (.25 5) 6.10 (.24 0) -B 4.69 ( .18 5 ) 4.20 ( .16 5 ) 1 .32 (.05 2) 1 .22 (.04 8)
4 1 5.24 (.60 0) 1 4.84 (.58 4)
1.15 (.04 5) M IN 1 2 3
L E A D A S S IG NM E NT S 1 - GATE 2 - D R A IN 3 - S O U RC E 4 - D R A IN
1 4.09 (.55 5) 1 3.47 (.53 0)
4.06 (.16 0) 3.55 (.14 0)
3X 3X 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 )
0.93 (.03 7) 0.69 (.02 7) M BAM
3X
0.55 (.02 2) 0.46 (.01 8)
0 .3 6 (.01 4)
2.54 (.10 0) 2X N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 2 C O N TR O L LIN G D IM E N S IO N : IN C H
2 .92 (.11 5) 2 .64 (.10 4)
3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B . 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .
Part Marking Information
TO-220AB
EXAMP : TH IS N 1 0 1 0 E X A M P L E :L ETH IS IS A N AIR F IR F1 0 1 0 W H ASSEMB W ITH ITA S S E M B L Y L Y L C CO 9B 9B L O T O TO D E D E 1M 1 M
A A
IN TE R N A N A N IN TE R N A T IO TIOL A L R E C TIF R E C TIFIE R IE R IR F IR F 10 1 0 1 0 10 L LOGO GO 9 2 49 2 4 6 6 9B 9B1 M 1 M ASSEMB ASSEMBLY LY L C CO L OT O T O D E D E
PA N NU MB P A R T R TU M B E R E R
DA C CO D A TE TEO D E D E (Y Y(Y Y W W ) WW) Y Y Y Y Y= A R A R = E YE W = W EWK E K WW W = E E
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 5/98

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